JAN2N6784 IR/HARRIS

Description: MOSFET N-CH 200V 2.25A TO39, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-39, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 800mW (Ta), 15W (Tc), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-205AF Metal Can, Packaging: Bulk.