JANTXV2N3636UB/TR Microsemi Corporation
Hersteller: Microsemi Corporation
Description: TRANS PNP 175V 10UA UB
Qualification: MIL-PRF-19500/357
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 175 V
Current - Collector (Ic) (Max): 10 µA
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
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Technische Details JANTXV2N3636UB/TR Microsemi Corporation
Description: TRANS PNP 175V 10UA UB, Qualification: MIL-PRF-19500/357, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 175 V, Current - Collector (Ic) (Max): 10 µA, Grade: Military, Supplier Device Package: UB, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 4-SMD, No Lead, Packaging: Bulk.
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| JANTXV2N3636UB/TR | Microchip / Microsemi |
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Bipolar Transistors - BJT 175 V Small-Signal BJT
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Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH