KSA1013OTA ON Semiconductor
auf Bestellung 4571 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2738+ | 0.2 EUR |
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Technische Details KSA1013OTA ON Semiconductor
Description: TRANS PNP 160V 1A TO-92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 900 mW.
Weitere Produktangebote KSA1013OTA nach Preis ab 0.21 EUR bis 0.21 EUR
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KSA1013OTA | Hersteller : Fairchild Semiconductor |
 Description: TRANS PNP 160V 1A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 900 mW |
auf Bestellung 2839 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSA1013OTA | Hersteller : ONSEMI |
Description: ONSEMI - KSA1013OTA - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 6305 Stücke: Lieferzeit 14-21 Tag (e) |
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KSA1013OTA | Hersteller : ON Semiconductor |
Trans GP BJT PNP 160V 1A 900mW 3-Pin TO-92L Fan-Fold |
Produkt ist nicht verfügbar |
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KSA1013OTA | Hersteller : onsemi |
Description: TRANS PNP 160V 1A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |