KSB1151YSTSTU ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - KSB1151YSTSTU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
| Anzahl | Privatkunde |
|---|---|
| 1233+ | 0.77 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
1233 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details KSB1151YSTSTU ONSEMI
Description: TRANS PNP 60V 5A TO-126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.3 W.
Weitere Produktangebote KSB1151YSTSTU nach Preis ab 0.44 EUR bis 2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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KSB1151YSTSTU | Fairchild Semiconductor |
Description: TRANS PNP 60V 5A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W |
auf Bestellung 5760 Stücke: Lieferzeit 10-14 Tag (e) |
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KSB1151YSTSTU | onsemi |
Bipolar Transistors - BJT PNP Epitaxial Sil Short Leads |
auf Bestellung 2762 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSB1151YSTSTU | FAIRCHILD |
KSB1151YSTSTU |
auf Bestellung 5760 Stücke: Lieferzeit 14-21 Tag (e) |
|
| KSB1151YSTSTU |
|
Hersteller: Fairchild Semiconductor
Description: TRANS PNP 60V 5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Description: TRANS PNP 60V 5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
auf Bestellung 5760 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 699+ | 0.83 EUR |
| KSB1151YSTSTU |
|
Hersteller: onsemi
Bipolar Transistors - BJT PNP Epitaxial Sil Short Leads
Bipolar Transistors - BJT PNP Epitaxial Sil Short Leads
auf Bestellung 2762 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2 EUR |
| 10+ | 1.23 EUR |
| 120+ | 0.81 EUR |
| 540+ | 0.63 EUR |
| 1020+ | 0.56 EUR |
| 2520+ | 0.49 EUR |
| 5040+ | 0.44 EUR |
| KSB1151YSTSTU |
|
Hersteller: FAIRCHILD
KSB1151YSTSTU
KSB1151YSTSTU
auf Bestellung 5760 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 971+ | 0.69 EUR |
| 1053+ | 0.63 EUR |