KSB1151YSTSTU Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: TRANS PNP 60V 5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
auf Bestellung 5760 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1025+ | 0.49 EUR |
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Technische Details KSB1151YSTSTU Fairchild Semiconductor
Description: TRANS PNP 60V 5A TO-126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.3 W.
Weitere Produktangebote KSB1151YSTSTU nach Preis ab 0.51 EUR bis 0.57 EUR
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KSB1151YSTSTU | Hersteller : ON Semiconductor / Fairchild |
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auf Bestellung 2878 Stücke: Lieferzeit 10-14 Tag (e) |
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KSB1151YSTSTU | Hersteller : ONSEMI |
Description: ONSEMI - KSB1151YSTSTU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 5760 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSB1151YSTSTU | Hersteller : FAIRCHILD |
KSB1151YSTSTU |
auf Bestellung 5760 Stücke: Lieferzeit 14-21 Tag (e) |
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KSB1151YSTSTU | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube |
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KSB1151YSTSTU | Hersteller : onsemi |
Description: TRANS PNP 60V 5A TO-126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W |
Produkt ist nicht verfügbar |