KSC10080BU Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: KSC1008OBU - NPN EPITACIAL SILIC
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 10000+ | 0.047 EUR |
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Technische Details KSC10080BU Fairchild Semiconductor
Description: KSC1008OBU - NPN EPITACIAL SILIC, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 700 mA, Part Status: Obsolete, Supplier Device Package: TO-92-3, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk.