Produkte > SAMSUNG > KSC945-LTA

KSC945-LTA Samsung


Hersteller: Samsung

auf Bestellung 120000 Stücke:

Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details KSC945-LTA Samsung

Description: TRANS NPN 50V 0.15A TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 1mA, 6V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW.

Weitere Produktangebote KSC945-LTA

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
KSC945LTA KSC945LTA Hersteller : ON Semiconductor ksc945-d.pdf Trans GP BJT NPN 50V 0.15A 3-Pin TO-92 Ammo
Produkt ist nicht verfügbar
KSC945LTA KSC945LTA Hersteller : onsemi ksc945-d.pdf Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Produkt ist nicht verfügbar