KSD1616ALTA ON Semiconductor
| Anzahl | Preis |
|---|---|
| 5848+ | 0.093 EUR |
| 10000+ | 0.081 EUR |
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Produktbewertung abgeben
Technische Details KSD1616ALTA ON Semiconductor
Description: TRANS NPN 60V 1A TO-92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V, Frequency - Transition: 160MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 750 mW.
Weitere Produktangebote KSD1616ALTA nach Preis ab 0.081 EUR bis 0.12 EUR
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KSD1616ALTA | ON Semiconductor |
 Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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KSD1616ALTA | Fairchild Semiconductor |
Description: TRANS NPN 60V 1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 160MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 750 mW |
auf Bestellung 52699 Stücke: Lieferzeit 10-14 Tag (e) |
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KSD1616ALTA | onsemi |
Description: TRANS NPN 60V 1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 160MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 750 mW |
auf Bestellung 17884 Stücke: Lieferzeit 10-14 Tag (e) |
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KSD1616ALTA | ON Semiconductor / Fairchild |
Bipolar Transistors - BJT NPN Epitaxial Transistor |
auf Bestellung 6203 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||
| KSD1616ALTA |
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auf Bestellung 62500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| KSD1616ALTA |
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Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold
Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5848+ | 0.093 EUR |
| 10000+ | 0.081 EUR |
| KSD1616ALTA |
|
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
Description: TRANS NPN 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
auf Bestellung 52699 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3883+ | 0.12 EUR |
| KSD1616ALTA |
|
Hersteller: onsemi
Description: TRANS NPN 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
Description: TRANS NPN 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
auf Bestellung 17884 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3883+ | 0.12 EUR |
| KSD1616ALTA |
|
Hersteller: ON Semiconductor / Fairchild
Bipolar Transistors - BJT NPN Epitaxial Transistor
Bipolar Transistors - BJT NPN Epitaxial Transistor
auf Bestellung 6203 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| KSD1616ALTA |
|
auf Bestellung 62500 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH