KSD1616ALTA

KSD1616ALTA Fairchild Semiconductor


FAIR-S-A0000605148-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: TRANS NPN 60V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
auf Bestellung 52699 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5323+0.099 EUR
Mindestbestellmenge: 5323
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Produktbewertung abgeben

Technische Details KSD1616ALTA Fairchild Semiconductor

Description: TRANS NPN 60V 1A TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V, Frequency - Transition: 160MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 750 mW.

Weitere Produktangebote KSD1616ALTA nach Preis ab 0.099 EUR bis 0.099 EUR

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Preis ohne MwSt
KSD1616ALTA KSD1616ALTA Hersteller : onsemi FAIR-S-A0000605148-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 60V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5323+0.099 EUR
Mindestbestellmenge: 5323
KSD1616ALTA KSD1616ALTA Hersteller : ON Semiconductor ksd1616a-d.pdf Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
KSD1616ALTA KSD1616ALTA Hersteller : ON Semiconductor / Fairchild KSD1616A-1301264.pdf Bipolar Transistors - BJT NPN Epitaxial Transistor
auf Bestellung 6203 Stücke:
Lieferzeit 10-14 Tag (e)
KSD1616ALTA FAIR-S-A0000605148-1.pdf?t.download=true&u=5oefqw KSD1616A.pdf
auf Bestellung 62500 Stücke:
Lieferzeit 21-28 Tag (e)
KSD1616ALTA Hersteller : ONSEMI ONSM-S-A0003585056-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - KSD1616ALTA - KSD1616ALTA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 4180 Stücke:
Lieferzeit 14-21 Tag (e)
KSD1616ALTA KSD1616ALTA Hersteller : ON Semiconductor ksd1616a-d.pdf Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold
Produkt ist nicht verfügbar
KSD1616ALTA KSD1616ALTA Hersteller : onsemi KSD1616A.pdf Description: TRANS NPN 60V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
Produkt ist nicht verfügbar
KSD1616ALTA KSD1616ALTA Hersteller : onsemi KSD1616A.pdf Description: TRANS NPN 60V 1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
Produkt ist nicht verfügbar