Technische Details KSP42ATA ON Semiconductor
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Active, Supplier Device Package: TO-92-3, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Bulk.
Weitere Produktangebote KSP42ATA
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
KSP42ATA | Fairchild Semiconductor |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPower - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: TO-92-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| KSP42ATA | Diodes Incorporated |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
KSP42ATA | onsemi / Fairchild |
Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| KSP42ATA |
![]() |
Hersteller: Fairchild Semiconductor
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSP42ATA |
![]() |
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT
Bipolar Transistors - BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSP42ATA |
![]() |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH




