MASMLJ16Ae3 MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
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Technische Details MASMLJ16Ae3 MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB, Type of diode: TVS, Peak pulse power dissipation: 3kW, Max. off-state voltage: 16V, Breakdown voltage: 17.8V, Max. forward impulse current: 115.4A, Semiconductor structure: unidirectional, Tolerance: ±5%, Case: DO214AB, Mounting: SMD, Leakage current: 2µA, Anzahl je Verpackung: 1 Stücke.
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Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 17.8V; 115.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 16V Breakdown voltage: 17.8V Max. forward impulse current: 115.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA |
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