MBR12060CTR GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
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Technische Details MBR12060CTR GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 120A 2TOWER, Current - Reverse Leakage @ Vr: 3 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A, Voltage - DC Reverse (Vr) (Max): 60 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Twin Tower, Current - Average Rectified (Io) (per Diode): 120A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Twin Tower, Packaging: Bulk.
Weitere Produktangebote MBR12060CTR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MBR12060CTR | Hersteller : GeneSiC Semiconductor |
Diode Modules 60V 120A Schottky Recovery |
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