MBR12080CT GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
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Technische Details MBR12080CT GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 120A 2TOWER, Current - Reverse Leakage @ Vr: 3 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A, Voltage - DC Reverse (Vr) (Max): 80 V, Part Status: Active, Supplier Device Package: Twin Tower, Current - Average Rectified (Io) (per Diode): 120A (DC), Diode Configuration: 1 Pair Common Anode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Twin Tower, Packaging: Bulk.
Weitere Produktangebote MBR12080CT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MBR12080CT | Hersteller : GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 120A 80P56R |
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