MBR200200CT DACO Semiconductor
Hersteller: DACO Semiconductor
Description: DIODE MODULE SCHOTTKY 200V 100A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
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Technische Details MBR200200CT DACO Semiconductor
Description: DIODE MOD SCHOT 200V 100A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A, Current - Reverse Leakage @ Vr: 3 mA @ 200 V.
Weitere Produktangebote MBR200200CT
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| MBR200200CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOT 200V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
MBR200200CT | GeneSiC Semiconductor |
Diode Modules 200V 200A Forward |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MBR200200CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBR200200CT |
|
Hersteller: GeneSiC Semiconductor
Diode Modules 200V 200A Forward
Diode Modules 200V 200A Forward
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH