MBR2X080A120 GeneSiC Semiconductor

Description: DIODE MOD SCHOTT 120V 80A SOT227, Packaging: Bulk, Current - Reverse Leakage @ Vr: 3 mA @ 120 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A, Voltage - DC Reverse (Vr) (Max): 120 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 80A, Diode Configuration: 2 Independent, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC.