MBR30035CTR GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 150A 2TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Anode
Technology: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
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Technische Details MBR30035CTR GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 150A 2TOWER, Current - Reverse Leakage @ Vr: 1 mA @ 35 V, Voltage - Forward (Vf) (Max) @ If: 700 mV @ 150 A, Voltage - DC Reverse (Vr) (Max): 35 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Twin Tower, Current - Average Rectified (Io) (per Diode): 150A, Diode Configuration: 1 Pair Common Anode, Technology: Schottky, Reverse Polarity, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Twin Tower, Packaging: Bulk.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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MBR30035CTR | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules 35V 300A Schottky Recovery |
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