MBR30045CT GeneSiC Semiconductor

Description: DIODE MODULE 45V 150A 2TOWER, Current - Reverse Leakage @ Vr: 8 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A, Voltage - DC Reverse (Vr) (Max): 45 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Twin Tower, Current - Average Rectified (Io) (per Diode): 150A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Twin Tower, Packaging: Bulk.