Technische Details MBR3540 GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 35A DO4, Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A, Voltage - DC Reverse (Vr) (Max): 40 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-4, Current - Average Rectified (Io): 35A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk.
Weitere Produktangebote MBR3540
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MBR3540 | Hersteller : GeneSiC Semiconductor |
 Description: DIODE SCHOTTKY 40V 35A DO4Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-4 Current - Average Rectified (Io): 35A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Packaging: Bulk |
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