MBR600100CT GeneSiC Semiconductor
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Technische Details MBR600100CT GeneSiC Semiconductor
Category: Diode modules, Description: Module: diode; double,common cathode; 100V; If: 300Ax2; Twin tower, Max. off-state voltage: 100V, Load current: 300A x2, Semiconductor structure: common cathode; double, Case: Twin tower, Electrical mounting: screw, Mechanical mounting: screw, Type of module: diode, Features of semiconductor devices: Schottky, Max. forward voltage: 0.84V, Max. forward impulse current: 4kA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MBR600100CT
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MBR600100CT | Hersteller : GeneSiC Semiconductor |
 Diode Schottky 100V 600A 3-Pin Twin Tower |
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MBR600100CT | Hersteller : DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 100V; If: 300Ax2; Twin tower Max. off-state voltage: 100V Load current: 300A x2 Semiconductor structure: common cathode; double Case: Twin tower Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Max. forward voltage: 0.84V Max. forward impulse current: 4kA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MBR600100CT | Hersteller : GeneSiC Semiconductor |
Description: DIODE MODULE 100V 300A 2TOWER |
Produkt ist nicht verfügbar |
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MBR600100CT | Hersteller : GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A100P/70 |
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MBR600100CT | Hersteller : DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 100V; If: 300Ax2; Twin tower Max. off-state voltage: 100V Load current: 300A x2 Semiconductor structure: common cathode; double Case: Twin tower Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Max. forward voltage: 0.84V Max. forward impulse current: 4kA |
Produkt ist nicht verfügbar |