MBRH200150 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 200A D-67
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-67
Current - Average Rectified (Io): 200A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D-67
Packaging: Bulk
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Technische Details MBRH200150 GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 200A D-67, Current - Reverse Leakage @ Vr: 1 mA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A, Voltage - DC Reverse (Vr) (Max): 150 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: D-67, Current - Average Rectified (Io): 200A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: D-67, Packaging: Bulk.
Weitere Produktangebote MBRH200150
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MBRH200150 | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules 150V 200A Forward |
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