MBRT120200R GeneSiC Semiconductor

Description: DIODE MOD SCHOTT 200V 60A 3TOWER, Package / Case: Three Tower, Packaging: Bulk, Current - Reverse Leakage @ Vr: 1 mA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 60A, Diode Configuration: 1 Pair Common Anode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount.