Technische Details MBRT20045R GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 100A 3TOWER, Current - Reverse Leakage @ Vr: 1 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A, Voltage - DC Reverse (Vr) (Max): 45 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 100A, Diode Configuration: 1 Pair Common Anode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Weitere Produktangebote MBRT20045R
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MBRT20045R | Hersteller : GeneSiC Semiconductor |
 Description: DIODE MOD SCHOTT 45V 100A 3TOWERCurrent - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Anode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Three Tower Packaging: Bulk |
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