MBRT20080 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 100A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
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Technische Details MBRT20080 GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 100A 3TOWER, Current - Reverse Leakage @ Vr: 1 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A, Voltage - DC Reverse (Vr) (Max): 80 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 100A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Weitere Produktangebote MBRT20080
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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MBRT20080 | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 80P57R |
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