MBRT600100 GeneSiC Semiconductor
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Technische Details MBRT600100 GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 300A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 300A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Weitere Produktangebote MBRT600100
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MBRT600100 | Hersteller : GeneSiC Semiconductor |
 Description: DIODE MOD SCHOT 100V 300A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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MBRT600100 | Hersteller : GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 600A100P/70 |
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| MBRT600100 | Hersteller : DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 100V; If: 300Ax2; TO240AB Max. forward voltage: 0.84V Max. off-state voltage: 100V Load current: 300A x2 Max. forward impulse current: 4kA Semiconductor structure: common cathode; double Type of semiconductor module: diode Features of semiconductor devices: Schottky Mechanical mounting: screw Electrical mounting: screw Case: TO240AB |
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