MBRT600100 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 300A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
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Technische Details MBRT600100 GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 300A 3TOWER, Current - Reverse Leakage @ Vr: 1 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 300A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Weitere Produktangebote MBRT600100
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MBRT600100 | Hersteller : GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 600A100P/70 |
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