MBRT600200R DACO Semiconductor
Hersteller: DACO SemiconductorCategory: Diode modules
Description: Module: diode; double,common anode; 200V; If: 300Ax2; TO240AB
Max. forward voltage: 0.92V
Max. off-state voltage: 200V
Load current: 300A x2
Max. forward impulse current: 4kA
Semiconductor structure: common anode; double
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Electrical mounting: screw
Case: TO240AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 104.69 EUR |
| 3+ | 92.55 EUR |
| 10+ | 85.49 EUR |
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Produktbewertung abgeben
Technische Details MBRT600200R DACO Semiconductor
Description: DIODE MODULE SCHOTTKY 200V 300A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Reverse Polarity, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 300A, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A, Current - Reverse Leakage @ Vr: 4 mA @ 200 V.
Weitere Produktangebote MBRT600200R nach Preis ab 85.49 EUR bis 147.35 EUR
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MBRT600200R | Hersteller : DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common anode; 200V; If: 300Ax2; TO240AB Max. forward voltage: 0.92V Max. off-state voltage: 200V Load current: 300A x2 Max. forward impulse current: 4kA Semiconductor structure: common anode; double Type of semiconductor module: diode Features of semiconductor devices: Schottky Mechanical mounting: screw Electrical mounting: screw Case: TO240AB |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRT600200R | Hersteller : DACO Semiconductor |
Description: DIODE MODULE SCHOTTKY 200V 300A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A Current - Reverse Leakage @ Vr: 4 mA @ 200 V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| MBRT600200R | Hersteller : GeneSiC Semiconductor |
Silicon Power Schottky Diode |
Produkt ist nicht verfügbar |
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MBRT600200R | Hersteller : GeneSiC Semiconductor |
Diode Modules 200V 600A Reverse |
Produkt ist nicht verfügbar |