MC33GD3100BEKR2 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: IC GATE DRVR HALF-BRIDGE 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5V
Supplier Device Package: 32-SOIC
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 15A, 15A
Grade: Automotive
Qualification: AEC-Q100
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Technische Details MC33GD3100BEKR2 NXP USA Inc.
Description: IC GATE DRVR HALF-BRIDGE 32SOIC, Packaging: Tape & Reel (TR), Package / Case: 32-BSSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 5V, Supplier Device Package: 32-SOIC, Channel Type: Single, Driven Configuration: Half-Bridge, Number of Drivers: 1, Gate Type: IGBT, MOSFET (N-Channel), Current - Peak Output (Source, Sink): 15A, 15A, Grade: Automotive, Qualification: AEC-Q100.
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MC33GD3100BEKR2 | NXP Semiconductors |
Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters |
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| MC33GD3100BEKR2 |
|
Hersteller: NXP Semiconductors
Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters
Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH