MGD3100BM58EK NXP USA Inc.
Hersteller: NXP USA Inc.
Description: IC GATE DRVR HALF-BRIDGE 32BSSOP
Packaging: Tube
Package / Case: 32-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5V
Supplier Device Package: 32-SOIC
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 15A, 15A
Grade: Automotive
Qualification: AEC-Q100
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.14 EUR |
| 10+ | 14.16 EUR |
| 42+ | 12.7 EUR |
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Technische Details MGD3100BM58EK NXP USA Inc.
Description: IC GATE DRVR HALF-BRIDGE 32BSSOP, Packaging: Tube, Package / Case: 32-BSSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 5V, Supplier Device Package: 32-SOIC, Channel Type: Single, Driven Configuration: Half-Bridge, Number of Drivers: 1, Gate Type: IGBT, MOSFET (N-Channel), Current - Peak Output (Source, Sink): 15A, 15A, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote MGD3100BM58EK nach Preis ab 10.58 EUR bis 18.98 EUR
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MGD3100BM58EK | NXP Semiconductors |
Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters |
auf Bestellung 84 Stücke: Lieferzeit 10-14 Tag (e) |
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| MGD3100BM58EK |
|
Hersteller: NXP Semiconductors
Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters
Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.98 EUR |
| 10+ | 14.8 EUR |
| 25+ | 13.3 EUR |
| 84+ | 12.46 EUR |
| 252+ | 11.6 EUR |
| 504+ | 10.86 EUR |
| 1008+ | 10.58 EUR |