MGD3160AM515EKR2 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: EV INVERTER CONTROL; IGBT & SIC
Packaging: Cut Tape (CT)
Package / Case: 32-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 15A
Technology: Capacitive Coupling
Current - Output High, Low: 15A, 15A
Voltage - Isolation: 8000Vrms
Approval Agency: CSA, UL, VDE
Supplier Device Package: 32-SOIC
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.75V ~ 40V
Qualification: AEC-Q100
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.59 EUR |
| 10+ | 13.7 EUR |
| 25+ | 12.72 EUR |
| 100+ | 11.66 EUR |
| 250+ | 11.47 EUR |
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Technische Details MGD3160AM515EKR2 NXP USA Inc.
Description: EV INVERTER CONTROL; IGBT & SIC, Packaging: Tape & Reel (TR), Package / Case: 32-BSSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C, Current - Peak Output: 15A, Technology: Capacitive Coupling, Current - Output High, Low: 15A, 15A, Voltage - Isolation: 8000Vrms, Approval Agency: CSA, UL, VDE, Supplier Device Package: 32-SOIC, Grade: Automotive, Number of Channels: 1, Voltage - Output Supply: 4.75V ~ 40V, Qualification: AEC-Q100.
Weitere Produktangebote MGD3160AM515EKR2 nach Preis ab 10.72 EUR bis 17.8 EUR
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MGD3160AM515EKR2 | NXP Semiconductors |
Gate Drivers EV Inverter Control; IGBT & SiC GDIC |
auf Bestellung 1030 Stücke: Lieferzeit 10-14 Tag (e) |
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| MGD3160AM515EKR2 |
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Hersteller: NXP Semiconductors
Gate Drivers EV Inverter Control; IGBT & SiC GDIC
Gate Drivers EV Inverter Control; IGBT & SiC GDIC
auf Bestellung 1030 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.8 EUR |
| 10+ | 13.86 EUR |
| 25+ | 12.88 EUR |
| 100+ | 11.79 EUR |
| 250+ | 11.39 EUR |
| 500+ | 11 EUR |
| 1000+ | 10.72 EUR |