MHT1006NT1 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V PLD-1.5W
Current - Test: 90 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: PLD-1.5W
Technology: LDMOS
Gain: 21.7dB
Power - Output: 1.26W
Frequency: 2.17GHz
Mounting Type: Surface Mount
Package / Case: PLD-1.5W
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details MHT1006NT1 NXP USA Inc.
Description: RF MOSFET LDMOS 28V PLD-1.5W, Current - Test: 90 mA, Voltage - Test: 28 V, Voltage - Rated: 65 V, Part Status: Obsolete, Supplier Device Package: PLD-1.5W, Technology: LDMOS, Gain: 21.7dB, Power - Output: 1.26W, Frequency: 2.17GHz, Mounting Type: Surface Mount, Package / Case: PLD-1.5W, Packaging: Tape & Reel (TR).
Weitere Produktangebote MHT1006NT1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
MHT1006NT1 | Hersteller : NXP USA Inc. |
Description: RF MOSFET LDMOS 28V PLD-1.5W Packaging: Cut Tape (CT) Current - Test: 90 mA Voltage - Test: 28 V Voltage - Rated: 65 V Part Status: Obsolete Supplier Device Package: PLD-1.5W Technology: LDMOS Gain: 21.7dB Power - Output: 1.26W Frequency: 2.17GHz Mounting Type: Surface Mount Package / Case: PLD-1.5W |
Produkt ist nicht verfügbar |
|
| MHT1006NT1 | Hersteller : NXP Semiconductors |
RF MOSFET Transistors 728-2700 MHz 1.26 W Avg. 28 V |
Produkt ist nicht verfügbar |
