Technische Details MJE270
Description: TRANS NPN DARL 100V 2A TO-126, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: TO-126, Frequency - Transition: 6MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V, Current - Collector Cutoff (Max): 1mA, Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Bulk.
Weitere Produktangebote MJE270
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
MJE270 | onsemi |
Description: TRANS NPN DARL 100V 2A TO-126Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TO-126 Frequency - Transition: 6MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MJE270 | Diodes Incorporated |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
|
MJE270 | onsemi |
Bipolar Transistors - BJT 2A 100V Bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MJE270 |
![]() |
Hersteller: onsemi
Description: TRANS NPN DARL 100V 2A TO-126
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-126
Frequency - Transition: 6MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS NPN DARL 100V 2A TO-126
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-126
Frequency - Transition: 6MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MJE270 |
![]() |
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT
Bipolar Transistors - BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJE270 |
![]() |
Hersteller: onsemi
Bipolar Transistors - BJT 2A 100V Bipolar
Bipolar Transistors - BJT 2A 100V Bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


