MJE271
Hersteller: auf Bestellung 14408 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MJE271
Description: TRANS PNP DARL 100V 2A TO126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V, Frequency - Transition: 6MHz, Supplier Device Package: TO-126, Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.5 W.
Weitere Produktangebote MJE271
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
.JPG "MJE271") |
MJE271 | Hersteller : onsemi |
Description: TRANS PNP DARL 100V 2A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V Frequency - Transition: 6MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |
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| MJE271 | Hersteller : Diodes Incorporated |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
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| MJE271 | Hersteller : onsemi |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |