MJE5730
Hersteller:
auf Bestellung 550 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MJE5730
Description: TRANS PNP 300V 1A TO220, Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: TO-220, Frequency - Transition: 10MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V, Current - Collector Cutoff (Max): 1mA, Power - Max: 40 W, Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A, Operating Temperature: -65°C ~ 150°C (TJ).
Weitere Produktangebote MJE5730
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
MJE5730 | onsemi |
Description: TRANS PNP 300V 1A TO220 Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-220 Frequency - Transition: 10MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Current - Collector Cutoff (Max): 1mA Power - Max: 40 W Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Operating Temperature: -65°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MJE5730 | onsemi |
Bipolar Transistors - BJT 1A 300V 40W PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MJE5730 |
|
Hersteller: onsemi
Description: TRANS PNP 300V 1A TO220
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Current - Collector Cutoff (Max): 1mA
Power - Max: 40 W
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Description: TRANS PNP 300V 1A TO220
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Current - Collector Cutoff (Max): 1mA
Power - Max: 40 W
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJE5730 |
|
Hersteller: onsemi
Bipolar Transistors - BJT 1A 300V 40W PNP
Bipolar Transistors - BJT 1A 300V 40W PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH