MMRF1013HSR5 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: FET RF 2CH 65V 2.9GHZ
Packaging: Tape & Reel (TR)
Current - Test: 100 mA
Voltage - Test: 30 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: NI-1230-4S
Technology: LDMOS
Gain: 13.3dB
Power - Output: 320W
Configuration: Dual
Frequency: 2.9GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230-4S
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Technische Details MMRF1013HSR5 NXP USA Inc.
Description: FET RF 2CH 65V 2.9GHZ, Packaging: Tape & Reel (TR), Current - Test: 100 mA, Voltage - Test: 30 V, Voltage - Rated: 65 V, Part Status: Obsolete, Supplier Device Package: NI-1230-4S, Technology: LDMOS, Gain: 13.3dB, Power - Output: 320W, Configuration: Dual, Frequency: 2.9GHz, Mounting Type: Chassis Mount, Package / Case: NI-1230-4S.
Weitere Produktangebote MMRF1013HSR5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MMRF1013HSR5 | Hersteller : NXP Semiconductors |
 RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V |
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