MMRF1312HSR5 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230
Packaging: Cut Tape (CT)
Package / Case: NI-1230-4S
Mounting Type: Chassis Mount
Frequency: 1.034GHz
Configuration: Dual
Power - Output: 1000W
Gain: 19.6dB
Technology: LDMOS
Supplier Device Package: NI-1230-4S
Part Status: Active
Voltage - Rated: 112 V
Voltage - Test: 50 V
Current - Test: 100 mA
Description: RF MOSFET LDMOS 50V NI1230
Packaging: Cut Tape (CT)
Package / Case: NI-1230-4S
Mounting Type: Chassis Mount
Frequency: 1.034GHz
Configuration: Dual
Power - Output: 1000W
Gain: 19.6dB
Technology: LDMOS
Supplier Device Package: NI-1230-4S
Part Status: Active
Voltage - Rated: 112 V
Voltage - Test: 50 V
Current - Test: 100 mA
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 951.16 EUR |
| 10+ | 922.55 EUR |
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Technische Details MMRF1312HSR5 NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230, Packaging: Tape & Reel (TR), Package / Case: NI-1230-4S, Mounting Type: Chassis Mount, Frequency: 1.034GHz, Configuration: Dual, Power - Output: 1000W, Gain: 19.6dB, Technology: LDMOS, Supplier Device Package: NI-1230-4S, Part Status: Active, Voltage - Rated: 112 V, Voltage - Test: 50 V, Current - Test: 100 mA.
Weitere Produktangebote MMRF1312HSR5
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MMRF1312HSR5 | Hersteller : NXP USA Inc. |
Description: RF MOSFET LDMOS 50V NI1230 Packaging: Tape & Reel (TR) Package / Case: NI-1230-4S Mounting Type: Chassis Mount Frequency: 1.034GHz Configuration: Dual Power - Output: 1000W Gain: 19.6dB Technology: LDMOS Supplier Device Package: NI-1230-4S Part Status: Active Voltage - Rated: 112 V Voltage - Test: 50 V Current - Test: 100 mA |
Produkt ist nicht verfügbar |
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MMRF1312HSR5 | Hersteller : NXP Semiconductors |
 RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V |
Produkt ist nicht verfügbar |