Produkte > Transistoren > Transistoren IGBT, Leistungsmodule > Modul N-CH 1000V 28A SOT227B (IXFN32N100Q3) IXYS
Modul N-CH 1000V 28A SOT227B (IXFN32N100Q3) IXYS
Produktcode: 221809
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Weitere Produktangebote Modul N-CH 1000V 28A SOT227B (IXFN32N100Q3) IXYS
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXFN32N100Q3 | IXYS |
Description: MOSFET N-CH 1000V 28A SOT227B Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 6.5V @ 8mA Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Package / Case: SOT-227-4, miniBLOC Packaging: Tube Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXFN32N100Q3 | IXYS |
 MOSFET Modules Q3Class HiPerFET Pwr MOSFET 1000V/28A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXFN32N100Q3 | IXYS |
Category: Transistor drivers Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 28A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.32Ω Pulsed drain current: 96A Power dissipation: 780W Technology: HiPerFET™; Q3-Class Kind of channel: enhancement Gate charge: 195nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFN32N100Q3 |
Hersteller: IXYS
Description: MOSFET N-CH 1000V 28A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Description: MOSFET N-CH 1000V 28A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN32N100Q3 |
|
Hersteller: IXYS
MOSFET Modules Q3Class HiPerFET Pwr MOSFET 1000V/28A
MOSFET Modules Q3Class HiPerFET Pwr MOSFET 1000V/28A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFN32N100Q3 |
|
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 96A
Power dissipation: 780W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhancement
Gate charge: 195nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor drivers
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 96A
Power dissipation: 780W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhancement
Gate charge: 195nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH