MOT15N10D
Hersteller: MOT
100V 15A 34.7W 80mOhm@10V,8A 3V 1 N-Channel TO-252 Single FETs, MOSFETs Equivalent: IRFR120N; MOT15N10D TO252(DPAK) MOT T15N10 TO252 MOT
Anzahl je Verpackung: 100 Stücke
auf Bestellung 1730 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 200+ | 0.27 EUR |
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Technische Details MOT15N10D MOT
Description: MOSFET N-CH 100V 15A 80m To-252, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A, Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V, Power Dissipation (Max): 50W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V.
Weitere Produktangebote MOT15N10D nach Preis ab 0.19 EUR bis 1.06 EUR
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MOT15N10D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 15A 80m To-252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT15N10D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 15A 80m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Description: MOSFET N-CH 100V 15A 80m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.23 EUR |
| 2500+ | 0.19 EUR |