MOT28N50Q Guangdong Inmark Electronics Co., Ltd.
Hersteller: Guangdong Inmark Electronics Co., Ltd.Description: MOSFET N-CH 500V 28A 0.2 To3PB
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 2mOhm @ 14A, 10V
Power Dissipation (Max): 312.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PB
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.16 EUR |
| 10+ | 7.9 EUR |
| 100+ | 4.74 EUR |
| 600+ | 3.32 EUR |
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Technische Details MOT28N50Q Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 28A 0.2 To3PB, Packaging: Tube, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A, Rds On (Max) @ Id, Vgs: 2mOhm @ 14A, 10V, Power Dissipation (Max): 312.5W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PB, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V.