MPSH17 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 15V TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 24dB
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 4438+ | 0.14 EUR |
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Technische Details MPSH17 Fairchild Semiconductor
Description: TRANS NPN 15V TO-92, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Gain: 24dB, Power - Max: 350mW, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V, Frequency - Transition: 800MHz, Noise Figure (dB Typ @ f): 6dB @ 200MHz, Supplier Device Package: TO-92-3, Part Status: Active.
Weitere Produktangebote MPSH17
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
,TO-226_straightlead.jpg "MPSH17") |
MPSH17 | onsemi |
Description: RF TRANS NPN 15V 800MHZ TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 24dB Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 6dB @ 200MHz Supplier Device Package: TO-92 (TO-226) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MPSH17 |
|
Hersteller: onsemi
Description: RF TRANS NPN 15V 800MHZ TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 24dB
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Supplier Device Package: TO-92 (TO-226)
Description: RF TRANS NPN 15V 800MHZ TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 24dB
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Supplier Device Package: TO-92 (TO-226)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH