MPSW3725 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2738+ | 0.25 EUR |
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14-21 Tag (e)
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2738 Stücke
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Technische Details MPSW3725 ON Semiconductor
Description: TRANS NPN 40V 1.2A TO-226-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 950mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: TO-226-3, Current - Collector (Ic) (Max): 1.2 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1 W.
Weitere Produktangebote MPSW3725 nach Preis ab 0.25 EUR bis 0.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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MPSW3725 | Fairchild Semiconductor |
 Description: TRANS NPN 40V 1.2A TO-226-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 950mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-226-3 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
auf Bestellung 10437 Stücke: Lieferzeit 10-14 Tag (e) |
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| MPSW3725 | ONSEMI |
Description: ONSEMI - MPSW3725 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 10437 Stücke: Lieferzeit 14-21 Tag (e) |
|
| MPSW3725 |
|
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 40V 1.2A TO-226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 950mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-226-3
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS NPN 40V 1.2A TO-226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 950mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-226-3
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
auf Bestellung 10437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1817+ | 0.31 EUR |
| MPSW3725 |
|
Hersteller: ONSEMI
Description: ONSEMI - MPSW3725 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - MPSW3725 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 10437 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4500+ | 0.25 EUR |