Technische Details MRF5812GR1 Advanced Semiconductor, Inc.
Description: RF TRANS NPN 15V 5GHZ 8-SOIC, Supplier Device Package: 8-SOIC, Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz, Frequency - Transition: 5GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V, Voltage - Collector Emitter Breakdown (Max): 15V, Current - Collector (Ic) (Max): 200mA, Power - Max: 1.25W, Gain: 13dB ~ 15.5dB, Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Obsolete.
Weitere Produktangebote MRF5812GR1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| MRF5812GR1 | MICROSEMI |
 SOIC 8/BIPOLAR/LDMOS TRANSISTOR MRF5812Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MRF5812GR1 | Microsemi |
Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
MRF5812GR1 | Microsemi Corporation |
Description: RF TRANS NPN 15V 5GHZ 8-SOIC Supplier Device Package: 8-SOIC Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Frequency - Transition: 5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Voltage - Collector Emitter Breakdown (Max): 15V Current - Collector (Ic) (Max): 200mA Power - Max: 1.25W Gain: 13dB ~ 15.5dB Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
MRF5812GR1 | Microsemi Corporation |
Description: RF TRANS NPN 15V 5GHZ 8-SOIC Part Status: Obsolete Supplier Device Package: 8-SOIC Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Frequency - Transition: 5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Voltage - Collector Emitter Breakdown (Max): 15V Current - Collector (Ic) (Max): 200mA Power - Max: 1.25W Gain: 13dB ~ 15.5dB Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MRF5812GR1 |
|
Hersteller: Microsemi
Транзистори
Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MRF5812GR1 |
|
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Supplier Device Package: 8-SOIC
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 200mA
Power - Max: 1.25W
Gain: 13dB ~ 15.5dB
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Supplier Device Package: 8-SOIC
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 200mA
Power - Max: 1.25W
Gain: 13dB ~ 15.5dB
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MRF5812GR1 |
|
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 200mA
Power - Max: 1.25W
Gain: 13dB ~ 15.5dB
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 200mA
Power - Max: 1.25W
Gain: 13dB ~ 15.5dB
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH