MRF5812GR2 Microsemi Corporation
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Supplier Device Package: 8-SOIC
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 200mA
Power - Max: 1.25W
Gain: 13dB ~ 15.5dB
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details MRF5812GR2 Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC, Supplier Device Package: 8-SOIC, Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz, Frequency - Transition: 5GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V, Voltage - Collector Emitter Breakdown (Max): 15V, Current - Collector (Ic) (Max): 200mA, Power - Max: 1.25W, Gain: 13dB ~ 15.5dB, Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote MRF5812GR2
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MRF5812GR2 | Hersteller : Microsemi Corporation |
Description: RF TRANS NPN 15V 5GHZ 8-SOIC Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SOIC Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Frequency - Transition: 5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Voltage - Collector Emitter Breakdown (Max): 15V Current - Collector (Ic) (Max): 200mA Power - Max: 1.25W Gain: 13dB ~ 15.5dB Transistor Type: NPN |
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