Technische Details MRF5812GR2 Microsemi
Description: RF TRANS NPN 15V 5GHZ 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: NPN, Gain: 13dB ~ 15.5dB, Power - Max: 1.25W, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V, Frequency - Transition: 5GHz, Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz, Supplier Device Package: 8-SOIC.
Weitere Produktangebote MRF5812GR2
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MRF5812GR2 | Hersteller : Microsemi Corporation |
 Description: RF TRANS NPN 15V 5GHZ 8-SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: NPN Gain: 13dB ~ 15.5dB Power - Max: 1.25W Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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MRF5812GR2 | Hersteller : Microsemi Corporation |
Description: RF TRANS NPN 15V 5GHZ 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: NPN Gain: 13dB ~ 15.5dB Power - Max: 1.25W Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |