MRFE6VP6600GNR3 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 50V OM780G-4
Packaging: Tape & Reel (TR)
Package / Case: OM-780G-4L
Mounting Type: Surface Mount
Frequency: 230MHz
Configuration: Dual
Power - Output: 600W
Gain: 24.7dB
Technology: LDMOS
Supplier Device Package: OM-780G-4L
Part Status: Active
Voltage - Rated: 133 V
Voltage - Test: 50 V
Current - Test: 100 mA
Description: RF MOSFET LDMOS 50V OM780G-4
Packaging: Tape & Reel (TR)
Package / Case: OM-780G-4L
Mounting Type: Surface Mount
Frequency: 230MHz
Configuration: Dual
Power - Output: 600W
Gain: 24.7dB
Technology: LDMOS
Supplier Device Package: OM-780G-4L
Part Status: Active
Voltage - Rated: 133 V
Voltage - Test: 50 V
Current - Test: 100 mA
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Technische Details MRFE6VP6600GNR3 NXP USA Inc.
Description: RF MOSFET LDMOS 50V OM780G-4, Packaging: Tape & Reel (TR), Package / Case: OM-780G-4L, Mounting Type: Surface Mount, Frequency: 230MHz, Configuration: Dual, Power - Output: 600W, Gain: 24.7dB, Technology: LDMOS, Supplier Device Package: OM-780G-4L, Part Status: Active, Voltage - Rated: 133 V, Voltage - Test: 50 V, Current - Test: 100 mA.
Weitere Produktangebote MRFE6VP6600GNR3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MRFE6VP6600GNR3 | Hersteller : NXP Semiconductors | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V |
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