Technische Details MS2267 MICROSEMI
Description: RF TRANS NPN 60V 1.215GHZ M214, Packaging: Bulk, Package / Case: M214, Mounting Type: Chassis Mount, Transistor Type: NPN, Operating Temperature: 250°C (TJ), Gain: 8dB ~ 8.7dB, Power - Max: 575W, Current - Collector (Ic) (Max): 20A, Voltage - Collector Emitter Breakdown (Max): 60V, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V, Frequency - Transition: 960MHz ~ 1.215GHz, Supplier Device Package: M214.
Weitere Produktangebote MS2267
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MS2267 | Microsemi Corporation |
Description: RF TRANS NPN 60V 1.215GHZ M214 Packaging: Bulk Package / Case: M214 Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 250°C (TJ) Gain: 8dB ~ 8.7dB Power - Max: 575W Current - Collector (Ic) (Max): 20A Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Frequency - Transition: 960MHz ~ 1.215GHz Supplier Device Package: M214 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MS2267 |
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 60V 1.215GHZ M214
Packaging: Bulk
Package / Case: M214
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 250°C (TJ)
Gain: 8dB ~ 8.7dB
Power - Max: 575W
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: M214
Description: RF TRANS NPN 60V 1.215GHZ M214
Packaging: Bulk
Package / Case: M214
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 250°C (TJ)
Gain: 8dB ~ 8.7dB
Power - Max: 575W
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: M214
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH