Technische Details MS652S APT(GHZ)
Description: RF TRANS NPN 16V 512MHZ M123, Part Status: Obsolete, Supplier Device Package: M123, Frequency - Transition: 450MHz ~ 512MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V, Voltage - Collector Emitter Breakdown (Max): 16V, Current - Collector (Ic) (Max): 2A, Power - Max: 25W, Gain: 10dB, Operating Temperature: 200°C (TJ), Transistor Type: NPN, Mounting Type: Chassis Mount, Package / Case: M123, Packaging: Bulk.
Weitere Produktangebote MS652S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MS652S | Hersteller : Microsemi Corporation |
Description: RF TRANS NPN 16V 512MHZ M123Part Status: Obsolete Supplier Device Package: M123 Frequency - Transition: 450MHz ~ 512MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Voltage - Collector Emitter Breakdown (Max): 16V Current - Collector (Ic) (Max): 2A Power - Max: 25W Gain: 10dB Operating Temperature: 200°C (TJ) Transistor Type: NPN Mounting Type: Chassis Mount Package / Case: M123 Packaging: Bulk |
Produkt ist nicht verfügbar |
