MSCSM120AM31CT1AG Microchip Technology / Atmel
auf Bestellung 7 Stücke:
Lieferzeit 311-315 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 222.2 EUR |
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Technische Details MSCSM120AM31CT1AG Microchip Technology / Atmel
Description: SIC 2N-CH 1200V 89A SP1F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 395W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V, Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: SP1F.
Weitere Produktangebote MSCSM120AM31CT1AG nach Preis ab 192.1 EUR bis 192.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MSCSM120AM31CT1AG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH SiC 1.2KV 89A 12-Pin Tube |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| MSCSM120AM31CT1AG | Hersteller : Microchip Technology |
Trans MOSFET N-CH SiC 1.2KV 89A 12-Pin Tube |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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MSCSM120AM31CT1AG Produktcode: 191184
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| MSCSM120AM31CT1AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W Case: SP1F Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 395W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCSM120AM31CT1AG | Hersteller : Microchip Technology |
Trans MOSFET N-CH SiC 1.2KV 89A 12-Pin Tube |
Produkt ist nicht verfügbar |
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| MSCSM120AM31CT1AG | Hersteller : Microchip Technology |
UNRLS CC8152 |
Produkt ist nicht verfügbar |
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MSCSM120AM31CT1AG | Hersteller : Microchip Technology |
Description: SIC 2N-CH 1200V 89A SP1F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SP1F |
Produkt ist nicht verfügbar |
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| MSCSM120AM31CT1AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W Case: SP1F Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 395W |
Produkt ist nicht verfügbar |