Technische Details MSD130-16 Microchip Technology
Description: BRIDGE RECT 3PHASE 1.6KV 130A M3, Packaging: Bulk, Current - Reverse Leakage @ Vr: 300 µA @ 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A, Current - Average Rectified (Io): 130 A, Voltage - Peak Reverse (Max): 1.6 kV, Supplier Device Package: M3, Technology: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Diode Type: Three Phase, Mounting Type: Chassis Mount, Package / Case: M3.
Weitere Produktangebote MSD130-16
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
|---|---|---|---|---|---|
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MSD130-16 | Microsemi Corporation |
 Description: BRIDGE RECT 3PHASE 1.6KV 130A M3Packaging: Bulk Current - Reverse Leakage @ Vr: 300 µA @ 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A Current - Average Rectified (Io): 130 A Voltage - Peak Reverse (Max): 1.6 kV Supplier Device Package: M3 Technology: Standard Operating Temperature: -40°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Chassis Mount Package / Case: M3 |
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Im Einkaufswagen Stück im Wert von UAH |
| MSD130-16 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 130A M3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Average Rectified (Io): 130 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: M3
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: M3
Description: BRIDGE RECT 3PHASE 1.6KV 130A M3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Average Rectified (Io): 130 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: M3
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: M3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH