MSMBJ45CA Microchip Technology
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Technische Details MSMBJ45CA Microchip Technology
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA, Type of diode: TVS, Mounting: SMD, Tolerance: ±5%, Case: DO214AA, Semiconductor structure: bidirectional, Leakage current: 1µA, Max. forward impulse current: 8.3A, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 45V, Breakdown voltage: 52.65V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MSMBJ45CA
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MSMBJ45CA | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Bidirectional SMD transil diodesDescription: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: bidirectional Leakage current: 1µA Max. forward impulse current: 8.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 52.65V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMBJ45CA | Hersteller : Microsemi Corporation |
Description: TVS DIODE 45V 72.7V DO214AA |
Produkt ist nicht verfügbar |
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MSMBJ45CA | Hersteller : Microchip / Microsemi |
ESD Suppressors / TVS Diodes TVS |
Produkt ist nicht verfügbar |
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MSMBJ45CA | Hersteller : MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: bidirectional Leakage current: 1µA Max. forward impulse current: 8.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 52.65V |
Produkt ist nicht verfügbar |