Technische Details MSRT150100(A)D GeneSiC Semiconductor
Description: DIODE GEN 1KV 150A 3 TOWER, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 150A, Diode Configuration: 1 Pair Series Connection, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Weitere Produktangebote MSRT150100(A)D
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
MSRT150100AD | GeneSiC Semiconductor |
Description: DIODE GEN 1KV 150A 3 TOWER Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 150A Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Three Tower Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
d_SPL.jpg "MSRT150100(A)D") |
MSRT150100(A)D | GeneSiC Semiconductor |
 Discrete Semiconductor Modules 1000V 150A Forward |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MSRT150100AD |
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1KV 150A 3 TOWER
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Description: DIODE GEN 1KV 150A 3 TOWER
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSRT150100(A)D |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 150A Forward
Discrete Semiconductor Modules 1000V 150A Forward
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH