MUR2560 GeneSiC Semiconductor

Description: DIODE GEN PURP 600V 25A DO4, Packaging: Bulk, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-4, Current - Average Rectified (Io): 25A, Technology: Standard, Reverse Recovery Time (trr): 90 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AA, DO-4, Stud.