MUR2X030A02 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 30A SOT-227
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
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Technische Details MUR2X030A02 GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 30A SOT-227, Current - Reverse Leakage @ Vr: 25 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 30A, Diode Configuration: 2 Independent, Technology: Standard, Reverse Recovery Time (trr): 60 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Bulk.
Weitere Produktangebote MUR2X030A02
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MUR2X030A02 | Hersteller : GeneSiC Semiconductor |
Diode Modules 200V 60A Fwd Super Fast Recovery |
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