MUR2X120A02 GeneSiC Semiconductor

Description: DIODE GEN PURP 200V 120A SOT227, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Bulk, Current - Reverse Leakage @ Vr: 25 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 120A, Diode Configuration: 2 Independent.