MURF20060R GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 600V 100A TO-244AB
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Bulk
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Technische Details MURF20060R GeneSiC Semiconductor
Description: DIODE MOD GP 600V 100A TO-244AB, Current - Reverse Leakage @ Vr: 25 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-244AB, Current - Average Rectified (Io) (per Diode): 100A, Diode Configuration: 1 Pair Common Anode, Technology: Standard, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: TO-244AB, Packaging: Bulk.
Weitere Produktangebote MURF20060R
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MURF20060R | Hersteller : GeneSiC Semiconductor |
 Rectifiers SI S-FST REC TO244AB 50-600V200A600P/420R |
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